MOCVD GROWTH OF BORON-NITRIDE FILMS FROM SINGLE SOURCE III-V PRECURSOR

Authors
PHANI AR DEVI GS ROY S RAO VJ
Citation
Ar. Phani et al., MOCVD GROWTH OF BORON-NITRIDE FILMS FROM SINGLE SOURCE III-V PRECURSOR, Journal of the Chemical Society, Chemical Communications, (8), 1993, pp. 684-685
Citations number
15
Categorie Soggetti
Chemistry
Journal title
Journal of the Chemical Society, Chemical Communications → ACNP
ISSN journal
00224936
Issue
8
Year of publication
1993
Pages
684 - 685
Database
ISI
SICI code
0022-4936(1993):8<684:MGOBFF>2.0.ZU;2-5
Abstract
The sp2 and sp3 phases of boron nitride (BN) have been deposited on Si and Ni substrates by low pressure MO-CVD (metal organic chemical vapo ur deposition) at 450-degrees-C from diethylaminoborane and the films were characterised by Fourier transform infrared (FTIR) and X-ray diff raction (XRD); a plausible mechanism of CVD is proposed from gas-phase decomposition studies, and to our knowledge this is the first report of the growth of BN by MO-CVD using a single source.