FORMATION OF THE SUPERCONDUCTOR-SEMICONDUCTOR INTERFACE BETWEEN BI2SR2CACU2O8-X AND INDIUM-TIN OXIDE

Planar heterostructures consisting of semiconducting highly textured i ndium-tin oxide (ITO) overlayers and c-axis oriented superconducting B i2Sr2CaCu2O8-x (2212) underlayers have been formed onto MgO(100) subst rates using de magnetron sputtering. Annealing of the structures in ai r at 500 degrees C resulted in the appearance of both the interface re sistivity anomaly at superconductive transition temperature-T-c and no nlinear current vs voltage behavior characteristics for a S-N junction . Meanwhile gradual change of the electrical properties towards S-I-N type behavior have been indicated with subsequent heat treatment in ai r at 50-100 degrees C. The origin of the insulating I-interlayer we as sociate with reversible oxygen removal in the 2212 compound at superco nductor-semiconductor interface.