A SPECTROSCOPIC STUDY ON THE LUMINESCENCE OF ER IN POROUS SILICON

We report a spectroscopic study on the photoluminescence (PL) of erbiu m implanted into porous silicon (Er:PSi). Two different porous Si samp les were implanted with a dose of 1x10(15) Er/cm(2) at 380 keV and ann ealed at 650 degrees C for 30 min under identical conditions. Both sam ples exhibited Er3+ luminescence at 1.54 mu m, which was quenched by l ess than a factor of two between 15 K and room temperature. Visible PL studies of Er implanted and annealed porous Si samples showed broad s pectra which peaked at similar to 700 nm for sample A and peaked at si milar to 660 nm for sample B. Sample A showed a four times stronger Er 3+ luminescence than that observed from sample B. In contrast, tempera ture quenching of the Er3+ luminescence was found to be similar or sli ghtly weaker from sample B than from sample A. The spectroscopic data will be discussed in terms of the excitation mechanisms of Er3+ in por ous Si nanostructures. (C) 1996 American Institute of Physics.