ELECTRIC-FIELD-INDUCED 2ND-HARMONIC GENERATION SPECTROSCOPY ON A METAL-OXIDE-SILICON STRUCTURE

Spectroscopic electric-field-induced second harmonic generation on a S i(lll)-SiO2-Cr metal-oxide-silicon structure shows a bias-independent ''interface'' resonance gt 3.25 eV and a ''bulk'' resonance at 3.43 eV which is strongly bias dependent. The symmetry forbidden bulk dipole contribution becomes observable, and even dominating, due to the bias- induced band-bending that breaks the bulk inversion symmetry. The orig in of these resonances is discussed, as well as the prospects for usin g second harmonic generation as a probe of metal-oxide-silicon charact eristics. (C) 1996 American Institute of Physics.