BROAD-BAND SINGLE-ELECTRON TUNNELING TRANSISTOR

A single-electron tunneling transistor has been directly coupled on-ch ip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain dose to unity. The HEMT transformed the 1.4 M Omega output impedance of the single electron tunneling (SET) transistor by two orders of mag nitude down to 5 k Omega, increasing its bandwidth to 50 kHz. This cir cuit makes it possible to observe the motion of individual electrons a t high frequencies. The requirements for the bandwidth in high frequen cy applications is discussed. (C) 1996 American Institute of Physics.