A SUB-2.0 V BICMOS LOGIC-CIRCUIT WITH A BICMOS CHARGE PUMP

A BiCMOS logic circuit with very small input capacitance has been deve loped, which operates at low supply voltages. A High-beta BiCMOS (H be ta-beta iCMOS) gate circuit which fully utilizes the bipolar transisto r features achieves 10 times the speed of a CMOS gate circuit with the same input capacitance and operating at 3.3 V supply voltage. In orde r to lower the minimum supply voltage of H beta-BiCMOS, a BiCMOS circu it configuration using a charge pump to pull up the output high level of the BiCMOS gate circuit is proposed. By introducing a BiCMOS charge pump. Hb-BiCMOS achieves very high speed operation at sub-2.0 V suppl y voltage. It has also been demonstrated that only a very small number of charge pump circuits are required to drive a large number of H bet a-BiCMOS gate circuits.