SURFACE PHOTOVOLTAGE IN PLASTICALLY DEFORMED GE AND SI

Authors
POHORYLES B MORAWSKI A
Citation
B. Pohoryles et A. Morawski, SURFACE PHOTOVOLTAGE IN PLASTICALLY DEFORMED GE AND SI, Surface science, 349(2), 1996, pp. 155-159
Citations number
7
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
349
Issue
2
Year of publication
1996
Pages
155 - 159
Database
ISI
SICI code
0039-6028(1996)349:2<155:SPIPDG>2.0.ZU;2-1
Abstract
Surface photovoltage - the well known technique of characterisation of surface states - was implemented to investigate the effect of disloca tions on the surface electrical charge in Ge and Si. Pronounced qualit ative influence of dislocations on the surface charge and its kinetics under laser pulse were observed and explained invoking charge transfe r from the surface via conducting dislocation segments to the bulk of the sample.