X-RAY STUDY OF DISLOCATION-STRUCTURE FORMATION FEATURES IN EPITAXIAL SYSTEMS WITH SMALL MISMATCH

Using the methods of x-ray topography and double-crystal diffractometr y, investigations have been carried out concerning the formation of th e real structure of epitaxial systems in the region of small mismatche s (DELTAa/a less than or similar to 10(-4)) characteristic of homoepit axial and a number of multicomponent heteroepitaxial systems. The cond itions and mechanisms of the formation of the dislocation network at i nterfaces and in system neutrals have been determined from the premise that the internal work done during dislocation slip is equal to the e nergy of the structural defects generated. A method of determining res idual stresses in epitaxial systems has been developed which is based on the treatment of experimental data on altering the curvature of an epitaxial system by layer-by-layer variation of its thickness. A proce dure for determining the plastic self-strain tensor component has been considered which characterizes the intensity of the relaxation proces s at various depths in the epitaxial system.