Y. Suzuki et al., X-RAY-SCATTERING TOPOGRAPHIC STUDY OF LATTICE-MISMATCHED COMPOUND SEMICONDUCTOR HETEROEPITAXIAL LAYERS, Journal of physics. D, Applied physics, 26(4A), 1993, pp. 86-91
X-ray scattering topography has been applied to the study of lattice-m
ismatched heteroepitaxial layer systems, MOCVD-grown GaAs on Si, InP o
n Si and an MBE-grown InAs on GaAs, which have not hitherto been obser
ved by conventional x-ray diffraction topography because of local crys
tal mosaicities. We have revealed the quantitative orientation distrib
utions of the heteroepitaxial layer systems by means of orientation to
pography and reconstruction orientation topography, and discussed crys
tallographical correlation between the epitaxial layers and substrates
. A strained model of each crystal system has been proposed, based on
lattice-constant mismatches and differences in thermal