X-RAY-SCATTERING TOPOGRAPHIC STUDY OF LATTICE-MISMATCHED COMPOUND SEMICONDUCTOR HETEROEPITAXIAL LAYERS

X-ray scattering topography has been applied to the study of lattice-m ismatched heteroepitaxial layer systems, MOCVD-grown GaAs on Si, InP o n Si and an MBE-grown InAs on GaAs, which have not hitherto been obser ved by conventional x-ray diffraction topography because of local crys tal mosaicities. We have revealed the quantitative orientation distrib utions of the heteroepitaxial layer systems by means of orientation to pography and reconstruction orientation topography, and discussed crys tallographical correlation between the epitaxial layers and substrates . A strained model of each crystal system has been proposed, based on lattice-constant mismatches and differences in thermal