MEASUREMENT OF A CROSS-SECTION FOR SINGLE-EVENT GATE RUPTURE IN POWERMOSFETS

The heavy-ion fluence required to induce Single-Event Gate Rupture (SE GR) in power MOSFET's is measured as a function of the drain bias, V-D S, and as a function of the gate bias, V-GS These experiments reveal t he abrupt nature of the SEGR-voltage threshold, In addition, the conce pts of cross-section, threshold, and saturation in the SEGR phenomenon are introduced, This experimental technique provides a convenient met hod to quantify heavy-ion effects in power MOSFET's.