DEMONSTRATION OF NPN INAS BIPOLAR-TRANSISTORS WITH INVERTED BASE DOPING

We demonstrate np(+)n InAs bipolar transistors that operate under room temperature and cryogenic conditions. InAs transistors on an InP subs trate were characterized as a function of temperature and exhibited go od room temperature and low temperature common-emitter characteristics . Although the base doping density exceeded the emitter doping density by a factor of 20, current gains of 30 were achieved at room temperat ure, Junction leakage currents and contact resistance were identified as problems to address.