GATE LENGTH EFFECT ON THE RTS NOISE AMPLITUDE IN SOI MOSFETS

The Random Telegraph Signal (RTS) noise amplitude in Silicon-on-Insula tor MOSFET's is studied as a function of the gate length, by adding a second transistor in series, Different types of behavior can be distin guished, pointing toward a different origin of the related trapping ce nters, It is shown that in Linear operation, the RTS amplitude and the corresponding low-frequency noise peak magnitude normally scales with 1/L, However, an increase with device length can also be found when t he noise peaks of two RTS's add up, For RTS's occurring in the saturat ion regime, a complete elimination is observed for larger L's, in supp ort of the supposed film-related origin.