GAMMA-X INTERVALLEY-SCATTERING TIME CONSTANT FOR GAAS ESTIMATED FROM HOT-ELECTRON NOISE SPECTROSCOPY DATA

Authors
ANINKEVICIUS V BAREIKIS V KATILIUS R LIBERIS J MATULIONIENE I MATULIONIS A SAKALAS P SALTIS R
Citation
V. Aninkevicius et al., GAMMA-X INTERVALLEY-SCATTERING TIME CONSTANT FOR GAAS ESTIMATED FROM HOT-ELECTRON NOISE SPECTROSCOPY DATA, Physical review. B, Condensed matter, 53(11), 1996, pp. 6893-6895
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
11
Year of publication
1996
Pages
6893 - 6895
Database
ISI
SICI code
0163-1829(1996)53:11<6893:GITCFG>2.0.ZU;2-L
Abstract
The technique to investigate hot-electron noise in doped semiconductor s at electric fields over 25 kV/cm is developed. The intervalley noise temperature at room temperature is found to saturate in GaAs at 15 00 0 K at fields over 100 kV/cm. From electric-field dependence of noise temperature, the intervalley scattering time of high-energy electrons from the Gamma valley into the X valleys is estimated to he 30 fs < pi (Gamma X) < 60 fs.