V. Aninkevicius et al., GAMMA-X INTERVALLEY-SCATTERING TIME CONSTANT FOR GAAS ESTIMATED FROM HOT-ELECTRON NOISE SPECTROSCOPY DATA, Physical review. B, Condensed matter, 53(11), 1996, pp. 6893-6895
The technique to investigate hot-electron noise in doped semiconductor
s at electric fields over 25 kV/cm is developed. The intervalley noise
temperature at room temperature is found to saturate in GaAs at 15 00
0 K at fields over 100 kV/cm. From electric-field dependence of noise
temperature, the intervalley scattering time of high-energy electrons
from the Gamma valley into the X valleys is estimated to he 30 fs < pi
(Gamma X) < 60 fs.