PRECURSOR DEFECT TO THE VACANCY-DIOXYGEN CENTER IN SI

In a recent paper [Phys. Rev. B 50, 11 531 (1994)] we have tentatively attributed two new infrared bands at 914 cm(-1) and 1000 cm(-1), in n eutron-irradiated Czochralski-grown silicon, to a [VO+O-i] structure t hat was considered to develop as an intermediate stage in the process of conversion of a VO center to a VO2 complex upon heat treatment. As a continuation of this work, we further investigate [VO+O-i] structure and the formation of intermediate defects. In addition, we present se miempirical calculations of the localized vibrational mode frequencies of the [VO+O-i] defect. The results are consistent with the experimen tal observations.