STRUCTURE MODEL FOR THE TYPE-C DEFECT ON THE SI(001) SURFACE

Authors
UDA T TERAKURA K
Citation
T. Uda et K. Terakura, STRUCTURE MODEL FOR THE TYPE-C DEFECT ON THE SI(001) SURFACE, Physical review. B, Condensed matter, 53(11), 1996, pp. 6999-7001
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
11
Year of publication
1996
Pages
6999 - 7001
Database
ISI
SICI code
0163-1829(1996)53:11<6999:SMFTTD>2.0.ZU;2-M
Abstract
A structure model for the type-C defect on Si(001) is proposed. The mo del is based on the assumption that the type-C defect is originated fr om a removal of only one atom in the second layer and not a removal of two atoms on the surface. Optimized structure obtained from the first -principles calculation reproduces scanning tunnel microscope images b oth at negative and positive sample biases.