MODELING AND SIMULATION OF BLANKET CHEMICAL-VAPOR-DEPOSITION OF WSIX FROM WF6 SI2H6/

The reaction mechanism of blanket chemical vapor deposition of WSix fr om WF6/Si-2/H-6 mixture was modeled based on the data of a tubular rea ctor. In this reaction, film deposition is initiated by radical chain reaction and the silicon concentration in the film can be increased ea sily. The model is as follows. During radical chain reaction, reaction between WF6 and Si2H6 takes place, Si-rich intermediary product with Si/W = 2 is formed and reaction between the product and Si2H6 causes a n increase of Si concentration. The Si concentration profile in the fi lm in the reactor could be simulated by using the reaction speed const ant as a fitting parameter and the validity of this model was confirme d. The activation energy of this reaction was 23.5 kJ/mol. Using this model, the Si concentration in the film formed in the substrate-heatin g-type reactor could be predicted.