A MOSSBAUER STUDY OF KR INCORPORATIONS IN SPUTTERED A-SI FILMS

Krypton atoms incorporated in sputtered a-silicon films are investigat ed by means of Kr-83 Mosssbauer spectroscopy. The hyperfine parameters of the (RbI)-Rb-83 source were determined by taking a spectrum agains t solid krypton. Mossbauer spectra were taken for films containing kry pton concentrations up to 7 at.%. A Debye temperature of 116(4) K has been measured for a sample containing 2.83 at.% Kr. The isomer shifts found for all spectra and the high Debye temperature indicate that kry pton resides in small highly pressurized precipitates.