THE THICKNESS DEPENDENCE OF THE HOPPING TIME-OF-FLIGHT CURRENT PROFILES IN SPATIALLY NONUNIFORM THIN DIELECTRIC LAYERS

In the previous paper by Rybicki er al in 1995 we presented the Monte Carlo calculations of the time-of-flight (TOF) hopping-transport curre nt profiles in non-uniformly defected crystalline layers, and a marked influence of the spatial non-uniformity of the total hopping centre d istribution has been shown in the case of extremely thin layers. In th e present paper we report using a Monte Carlo simulation the dependenc e of the TOF transient currents on the layer thickness L, in the wide range 35a less than or equal to L less than or equal to 10 000a. The c haracteristic current maxima occurring in layers with hopping centre d ensity which increases with increasing x (x is the distance from the i njecting contact) just before the effective TOF, reported previously f or very thin layers, persist in much thicker samples (L = 10 000a). Th e relative height of the current peaks initially increases with increa sing layer thickness and tends to a saturated value for thicker layers .