Cy. Mou et Jwp. Hsu, SCALING OF SURFACE-ROUGHNESS IN A HETEROGENEOUS FILM GROWTH SYSTEM - GEXSI1-X ON SI, Physical review. B, Condensed matter, 53(12), 1996, pp. 7610-7613
We examine how the roughness of compositionally graded, relaxed GeSi/S
i(001) films can be understood in terms of theoretical ideas based on
continuum descriptions of surface growth. The roughness of all samples
shows a universal behavior: it increases linearly with length at smal
l length scales and becomes constant at large length scales. Remarkabl
y, all data can be collapsed onto one universal can e. These results c
an be described by a linear model composed of Laplacian and surface di
ffusion terms. We also examine the nonuniversal amplitudes and the up-
down symmetry to investigate rigorously the linearity of the model.