SCALING OF SURFACE-ROUGHNESS IN A HETEROGENEOUS FILM GROWTH SYSTEM - GEXSI1-X ON SI

Authors
Citation
Cy. Mou et Jwp. Hsu, SCALING OF SURFACE-ROUGHNESS IN A HETEROGENEOUS FILM GROWTH SYSTEM - GEXSI1-X ON SI, Physical review. B, Condensed matter, 53(12), 1996, pp. 7610-7613
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
12
Year of publication
1996
Pages
7610 - 7613
Database
ISI
SICI code
0163-1829(1996)53:12<7610:SOSIAH>2.0.ZU;2-#
Abstract
We examine how the roughness of compositionally graded, relaxed GeSi/S i(001) films can be understood in terms of theoretical ideas based on continuum descriptions of surface growth. The roughness of all samples shows a universal behavior: it increases linearly with length at smal l length scales and becomes constant at large length scales. Remarkabl y, all data can be collapsed onto one universal can e. These results c an be described by a linear model composed of Laplacian and surface di ffusion terms. We also examine the nonuniversal amplitudes and the up- down symmetry to investigate rigorously the linearity of the model.