MODEL AND RESULTS FOR A DEEP-LEVEL WITH 2 DIFFERENT CONFIGURATIONS INHG0.3CD0.7TE

We consider a model for a defect which presents two distinct configura tions at two different states of charge and discuss its behavior as ob served via deep-level transient spectroscopy (DLTS) experiments. A gen eral solution is obtained for the occupation fractions of the defect a t each of both possible configurations. The obtained results are appli ed to explain the unusual dependence of DLTS line amplitudes as a func tion of filling pulse length in Hg0.3Cd0.7Te submitted to ion implanta tion.