TEMPERATURE AND DENSITY-DEPENDENCE OF THE ELECTRON LANDE G-FACTOR IN SEMICONDUCTORS

The temperature and density dependence of spin quantum beats of electr ons is measured by time-resolved photoluminescence spectroscopy and yi elds the electron Lande g factor in bulk GaAs, InP, and CdTe. In GaAs the g factor increases linearly from -0.44 at 4 K to -0.30 at 280 K; i n InP the g factor is 1.20 at 4 K, exhibiting a very small temperature dependence up to 160 K, and in CdTe the g factor follows between T=4 K and 240 K the empirical equation g=-1.653+-4x10(-4) T+2.8x10(-6) T-2 . In GaAs we demonstrate the suppression of spin quantum beats due to Fermi blocking in a degenerate electron gas and measure an increase of the GaAs g factor from -0.44 at densities below 1 x 10(16) cm(-3) to -0.33 at 10(17) cm(-3).