TEMPERATURE DEPENDENCES OF THE PARAMETERS OF ATOMS IN THE CRYSTAL-STRUCTURE OF THE INTERMEDIATE-VALENCE SEMICONDUCTOR SMB6 - INVESTIGATION BY HIGH-RESOLUTION POWDER NEUTRON-DIFFRACTION
Va. Trounov et al., TEMPERATURE DEPENDENCES OF THE PARAMETERS OF ATOMS IN THE CRYSTAL-STRUCTURE OF THE INTERMEDIATE-VALENCE SEMICONDUCTOR SMB6 - INVESTIGATION BY HIGH-RESOLUTION POWDER NEUTRON-DIFFRACTION, Journal of physics. Condensed matter, 5(16), 1993, pp. 2479-2488
The crystal structure of intermediate-valence (IV) samarium hexaboride
has been studied on single-crystal double-isotope samples (SmB6)-Sm-1
54-B-11 by x-ray diffractometry at room temperature and by high-resolu
tion powder neutron diffraction in the temperature range 23 K less-tha
n-or-equal-to T less-than-or-equal-to 300 K. The x-ray experiment reve
aled the occurrence of vacancies at the boron site, larger thermal vib
rations of the Sm atom than of La in the isostructural non-IV material
LaB6 and an aspherical charge distribution around the Sm nucleus. The
neutron diffraction experiment confirmed the anomalous temperature de
pendence of the lattice parameter and revealed both a peculiar tempera
ture dependence of the anisotropic thermal vibrations of the boron ato
m and a temperature-dependent change in the ratio of the isotropic the
rmal parameters of the Sm and B atoms. Thermal vibrations of the Sm io
n can be satisfactorily described by the Einstein model with character
istic temperature THETA(E) congruent-to 120 K within the whole tempera
ture range. The data obtained are discussed in terms of the influence
of the fluctuating valence of the Sm ion on the structural parameters
of atoms.