Hy. Chang et al., MODIFICATION OF PTCR BEHAVIOR OF (SR0-CENTER-DOT-2BA0-CENTER-DOT-8)TIO3, MATERIALS BY POST-HEAT TREATMENT AFTER MICROWAVE SINTERING, Journal of the European Ceramic Society, 16(1), 1996, pp. 63-70
(Sr(0.2)Bn(0.8))TiO3 materials have been effectively densified by micr
owave sintering process. The grain size (similar to 6 mu m) and PTCR c
haracteristics (T-c = 50 degrees C, rho(max)/rho(min) = 10(2)) of the
as-sintered samples vary insignificantly with sintering temperature (1
100-1180 degrees C) and soaking time (10-40 min). However, lowering th
e cooling rate after sintering substantially increases the resistivity
jump (rho(max)/rho(min)) from 10(2) to 10(5.3), without altering the
microstructure. Subsequent annealing, on the other hand substantially
modifies the micr ostructure and PTCR characteristics. The resistivity
jump increases monotonously with heat treatment temperature (T-ht) an
d reaches (rho(max)/rho(min)) = 10(7) for samples heat-treated at 1300
degrees C for 2 h. The grain size remains nearly unchanged for T-ht l
ess than or equal to 1200 degrees C and grows markedly for samples hea
t-treated at a higher temperature. The effective tr ap level is estima
ted to be E(s) = 1.46 eV. The activation energy for the densification
rate is Q(MS) = 8.2 kcal/mol for microwave sintering and Q(cs) = 62.5
kcal/mol for conventional sintering process.