MODIFICATION OF PTCR BEHAVIOR OF (SR0-CENTER-DOT-2BA0-CENTER-DOT-8)TIO3, MATERIALS BY POST-HEAT TREATMENT AFTER MICROWAVE SINTERING

Citation
Hy. Chang et al., MODIFICATION OF PTCR BEHAVIOR OF (SR0-CENTER-DOT-2BA0-CENTER-DOT-8)TIO3, MATERIALS BY POST-HEAT TREATMENT AFTER MICROWAVE SINTERING, Journal of the European Ceramic Society, 16(1), 1996, pp. 63-70
Citations number
25
Categorie Soggetti
Material Science, Ceramics
ISSN journal
09552219
Volume
16
Issue
1
Year of publication
1996
Pages
63 - 70
Database
ISI
SICI code
0955-2219(1996)16:1<63:MOPBO(>2.0.ZU;2-X
Abstract
(Sr(0.2)Bn(0.8))TiO3 materials have been effectively densified by micr owave sintering process. The grain size (similar to 6 mu m) and PTCR c haracteristics (T-c = 50 degrees C, rho(max)/rho(min) = 10(2)) of the as-sintered samples vary insignificantly with sintering temperature (1 100-1180 degrees C) and soaking time (10-40 min). However, lowering th e cooling rate after sintering substantially increases the resistivity jump (rho(max)/rho(min)) from 10(2) to 10(5.3), without altering the microstructure. Subsequent annealing, on the other hand substantially modifies the micr ostructure and PTCR characteristics. The resistivity jump increases monotonously with heat treatment temperature (T-ht) an d reaches (rho(max)/rho(min)) = 10(7) for samples heat-treated at 1300 degrees C for 2 h. The grain size remains nearly unchanged for T-ht l ess than or equal to 1200 degrees C and grows markedly for samples hea t-treated at a higher temperature. The effective tr ap level is estima ted to be E(s) = 1.46 eV. The activation energy for the densification rate is Q(MS) = 8.2 kcal/mol for microwave sintering and Q(cs) = 62.5 kcal/mol for conventional sintering process.