IMPROVED METHOD FOR HGI2 CRYSTAL-GROWTH AND DETECTOR FABRICATION

Authors
LI WT LI ZH ZHU SF YIN SJ ZHAO BJ CHEN GX
Citation
Wt. Li et al., IMPROVED METHOD FOR HGI2 CRYSTAL-GROWTH AND DETECTOR FABRICATION, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 370(2-3), 1996, pp. 435-437
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
370
Issue
2-3
Year of publication
1996
Pages
435 - 437
Database
ISI
SICI code
0168-9002(1996)370:2-3<435:IMFHCA>2.0.ZU;2-3
Abstract
Instead of the temperature oscillation method (TOM), a modified vapor growth method was applied in this paper to grow large HgI2 crystals wi th fewer lattice defects by providing a relatively stable temperature field during growth. And a new processing technique of HgI2 crystals w as developed for detector fabrication by merging solution string-sawin g and hand-cleaving. The lattice deformations caused during cleaving w ere reduced greatly by eliminating passivated layers on the sawed crys tal platelets before cleaving.