AES AND USXES INVESTIGATIONS OF THE PHASE-TRANSFORMATION IN THE SURFACE-LAYERS OF V-SI SIO2/SI THIN-FILMS STRUCTURE STIMULATED BY OXYGEN ANNEALING/

Authors
DOMASHEVSKAYA EP YURAKOV YA VELIGURA GA BOCHAROV SA
Citation
Ep. Domashevskaya et al., AES AND USXES INVESTIGATIONS OF THE PHASE-TRANSFORMATION IN THE SURFACE-LAYERS OF V-SI SIO2/SI THIN-FILMS STRUCTURE STIMULATED BY OXYGEN ANNEALING/, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 511-516
Citations number
11
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
76
Year of publication
1995
Pages
511 - 516
Database
ISI
SICI code
0368-2048(1995)76:<511:AAUIOT>2.0.ZU;2-Q
Abstract
Formation of surface SiO2 and slicides in thin film (V-Si)/SiO2/Si str uctures under thermal treatment in oxygen flow have been investigated.