CHARACTERIZATION OF CARBON NITRIDE FILMS PREPARED BY LASER REACTIVE ABLATION DEPOSITION

Authors
ZEMEK J LUCHES A LEGGIERI G FEJFAR A TRCHOVA M
Citation
J. Zemek et al., CHARACTERIZATION OF CARBON NITRIDE FILMS PREPARED BY LASER REACTIVE ABLATION DEPOSITION, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 747-752
Citations number
31
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
76
Year of publication
1995
Pages
747 - 752
Database
ISI
SICI code
0368-2048(1995)76:<747:COCNFP>2.0.ZU;2-Q
Abstract
Angular resolved X-ray induced photoelectron spectroscopy (ARXPS) and infra-red (IR) absorption measurements have been performed on carbon n itride layers deposited on Si(100) wafers kept at room temperature by an excimer laser ablation of graphite in nitrogen or ammonia. Results of both methods confirm the formation of carbon nitride with a graphit e-like structure.