INDIUM-HYDROGEN COMPLEXES IN SILICON AND GERMANIUM UNDER COMPRESSION AND TENSION

The response of hydrogen-acceptor complexes in silicon and germanium t o the application of uniaxial mechanical stress was studied by means o f the perturbed angular correlation technique. This hyperfine interact ion technique is sensitive to the microscopic structure of the immedia te lattice environment of the probe atom. For the measurements, the pr obe In-111 was introduced into Si and Ge crystals by ion implantation at room temperature. After annealing, the radioactive probe atom In-11 1 acts as an acceptor in the elemental semiconductors Si and Ge and as such can easily be passivated by hydrogen indiffusion. The resulting In-II complex was subsequently exposed to uniaxial compressive and ten sile stress, which was produced by bending the crystals along the thre e major lattice directions [100], [110] and [111]. It was found that t he application of uniaxial mechanical stress causes no change in the p opulation of the four equivalent bond centred H sites surrounding the In acceptor. Evidence was found for a large mismatch of the lattice pa rameters between the passivated In implanted layer and the surrounding pure Si.