AN ATOM-RESOLVED VIEW OF SILICON NANOCLUSTERS

Authors
MCCOMB DW COLLINGS BA WOLKOW RA MOFFATT DJ MACPHERSON CD RAYNER DM HACKETT PA HULSE JE
Citation
Dw. Mccomb et al., AN ATOM-RESOLVED VIEW OF SILICON NANOCLUSTERS, Chemical physics letters, 251(1-2), 1996, pp. 8-12
Citations number
18
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
Chemical physics letters → ACNP
ISSN journal
00092614
Volume
251
Issue
1-2
Year of publication
1996
Pages
8 - 12
Database
ISI
SICI code
0009-2614(1996)251:1-2<8:AAVOSN>2.0.ZU;2-A
Abstract
Atomically resolved scanning tunneling microscope images of Si cluster s deposited onto a Si(111)-7 x 7 substrate have been obtained. The clu sters display a capping layer of widely spaced surface atoms analogous to the reconstructed surface of a bulk crystal. Site-specific variati ons in the electronic characteristics of cluster surface atoms are det ected. Adsorption studies demonstrate size dependant reactivity of dep osited clusters. Clusters are observed to collapse upon annealing to f orm epitaxial Si islands.