PHASE-TRANSITIONS OF ANTIFERROELECTRIC LEAD ZIRCONATE THIN-FILMS IN HIGH-ELECTRIC-FIELD

Phase transitions in antiferroelectric lead zirconate thin films were studied at room temperature and at 77 K. The lead zirconate films were prepared on Pt coated Si substrates by a reactive magnetron co-sputte ring method followed by a rapid thermal annealing process at 700 degre es C. An electric field induced antiferroelectric - ferroelectric phas e transition was observed at room temperature with a maximum polarizat ion value of 70 mu C/cm(2). The average field required to induce the f erroelectric state and that for the reversion to the antiferroelectric state were 294 kV/cm and 179 kV/cm respectively. At 77 K a metastable ferroelectric - ferroelectric transition was observed with a maximum polarization of 58 mu C/cm(2). These transitions were found to be coin cident with those of lead zirconate single crystals.