X-RAY TOPOGRAPHIC CONTRAST OF ION-IMPLANT ATION BOUNDARIES IN SILICON-CRYSTALS

Authors
POLOVINIKINA VI MITINSKAYA TV SMOLSKII IL IMAMOV RM GRABCHAK VP ALEKSANDROV PA
Citation
Vi. Polovinikina et al., X-RAY TOPOGRAPHIC CONTRAST OF ION-IMPLANT ATION BOUNDARIES IN SILICON-CRYSTALS, Kristallografia, 41(1), 1996, pp. 136-142
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Kristallografia → ACNP
ISSN journal
00234761
Volume
41
Issue
1
Year of publication
1996
Pages
136 - 142
Database
ISI
SICI code
0023-4761(1996)41:1<136:XTCOIA>2.0.ZU;2-C