PROSPECTIVE SPIN-VALVE MAGNETO-RESISTIVE MEMORY ELEMENTS

Authors
VASILEVA NP KASATKIN SI MURAVEV AM
Citation
Np. Vasileva et al., PROSPECTIVE SPIN-VALVE MAGNETO-RESISTIVE MEMORY ELEMENTS, Automation and remote control, 56(10), 1995, pp. 1474-1483
Citations number
12
Categorie Soggetti
Controlo Theory & Cybernetics","Computer Application, Chemistry & Engineering","Instument & Instrumentation","Robotics & Automatic Control
Journal title
Automation and remote control → ACNP
ISSN journal
00051179
Volume
56
Issue
10
Year of publication
1995
Part
2
Pages
1474 - 1483
Database
ISI
SICI code
0005-1179(1995)56:10<1474:PSMME>2.0.ZU;2-I
Abstract
The possibility of creating spin-valve magneto-resistive memory elemen ts is investigated. High- and low-anisotropic soft films produced from common alloys are used to generate the spin-valve effect. Various met hods of controlling the spin-valve magneto-resistive memory elements a re compared. A control method is designed in which less stringent requ irements are imposed on the scatter of the parameters of magneto-resis tive memory elements than in the well-known. methods. This method ampl ifies the reading signal and widens the control current range for high data density.