SCINTILLATOR PHOTODIODE GAMMA-DETECTORS BASED ON HIGH-RESISTANCE SILICON-WAFERS

Authors
GRISHAEV SI IGNATOV SM MASLENNIKOV LA TISNEK NI URUTSKOEV LI
Citation
Si. Grishaev et al., SCINTILLATOR PHOTODIODE GAMMA-DETECTORS BASED ON HIGH-RESISTANCE SILICON-WAFERS, Instruments and experimental techniques, 38(5), 1995, pp. 609-611
Citations number
6
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
38
Issue
5
Year of publication
1995
Part
1
Pages
609 - 611
Database
ISI
SICI code
0020-4412(1995)38:5<609:SPGBOH>2.0.ZU;2-M
Abstract
The characteristics of photodiodes with areas of 1 cm(2) and manufactu red from the high-resistance (rho(n) = 7 k Ohm . cm) silicon wafers pr oduced by Wacker are given. Gamma detectors including EGO or CsI(Tl) s cintillators with volumes of 1, 10, 20, and 106 cm(3) have been built using these photodiodes. The energy resolutions at a photon energy of 662 keV are 6, 8, 9, and 14%, respectively.