RADIATIVE AND NONRADIATIVE TUNNELING PROCESSES IN SILICON

Authors
ZAKRZEWSKI AJ FRENS AM BENNEBROEK MT SCHMIDT J
Citation
Aj. Zakrzewski et al., RADIATIVE AND NONRADIATIVE TUNNELING PROCESSES IN SILICON, Radiation effects and defects in solids, 134(1-4), 1995, pp. 79-81
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
134
Issue
1-4
Year of publication
1995
Pages
79 - 81
Database
ISI
SICI code
1042-0150(1995)134:1-4<79:RANTPI>2.0.ZU;2-7
Abstract
An excitation transfer among carbon-oxygen and vacancy-oxygen defects in electron irradiated silicon was studied by means of the photo-Elect ron Spin Echo (photo-ESE) technique. Analysis of the appropriate rate equations enabled us to estimate quantum yield of nonradiative tunneli ng among (C-O) and (V-O) centers. These processes were found to be sev eral orders of magnitude more efficient than donor-acceptor pair radia tive recombination and bound exciton radiative transitions.