SIMULATION OF OXYGEN VACANCIES AT THE SI-SIO2 INTERFACE

Authors
CARNIATO S BOUREAU G HARDING J
Citation
S. Carniato et al., SIMULATION OF OXYGEN VACANCIES AT THE SI-SIO2 INTERFACE, Radiation effects and defects in solids, 134(1-4), 1995, pp. 179-183
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
134
Issue
1-4
Year of publication
1995
Pages
179 - 183
Database
ISI
SICI code
1042-0150(1995)134:1-4<179:SOOVAT>2.0.ZU;2-7
Abstract
The Si(001)/SiO2 (tridymite) interface has been simulated using a Mont e-Carlo method. It has been shown that in this way reasonable values o f angles and interatomic distances are obtained. The oxygen defect for mation energy dependence with different vacancy sites has been studied . Because of coulombic interactions, the formation of vacancies is muc h easier in the vicinity of the interface.