MAGNETIC BISTABILITY AND MEMORY OF CONDUCTION ELECTRONS RELEASED FROMOXYGEN VACANCIES IN GALLIUM OXIDE

Conduction electrons released from oxygen vacancies in gallium oxide e xhibit an electron spin resonance (CESR) line with pronounced hysteres is when the magnetic field is swept upward and backward. This memory e ffect is due to the existence of a bistable nuclear held induced by dy namic nuclear polarization of gallium nuclei. It is shown that this bi stability is the consequence of the one-dimensional (ID) character of the band structure of gallium oxide, with the conduction band formed a lmost exclusively from 4s orbitals of gallium in octahedral sites, for ming isolated double chains aligned along the b-axis.