EVIDENCE FOR SCHOTTKY-BARRIER FORMATION DUE TO HOLE-CENTERS IN AL2O3-MG AND MGO-LI WITH METAL CONTACTS

Citation
R. Vila et Mj. Decastro, EVIDENCE FOR SCHOTTKY-BARRIER FORMATION DUE TO HOLE-CENTERS IN AL2O3-MG AND MGO-LI WITH METAL CONTACTS, Radiation effects and defects in solids, 134(1-4), 1995, pp. 273-275
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
ISSN journal
10420150
Volume
134
Issue
1-4
Year of publication
1995
Pages
273 - 275
Database
ISI
SICI code
1042-0150(1995)134:1-4<273:EFSFDT>2.0.ZU;2-K
Abstract
Thermally stimulated polarization (TSP) measurements in quenched Al2O3 :Mg and MgO:Li are presented. A parallel behavior between the quenchin g-induced hole centers and the TSP spectra in both materials has been observed. The evolution of the main peak in each spectrum with the the rmal annealings, the applied voltage and the sample thickness shows th e existence of a Schottky barrier for holes at the metallic electrode- sample contacts. The current-voltage characteristics at room temperatu re also support this conclusion.