BAND BENDING AT SEMICONDUCTOR INTERFACES AND ITS EFFECT ON PHOTOEMISSION LINE-SHAPES

We show that, contrary to intuition and under normal experimental cond itions, the band bending at a semiconductor surface or interface does not strongly increase the linewidth of photoemission core-level peaks. The increase is smaller than the magnitude of the band bending, and i n most cases negligible. Non-negligible increases are found only when the linewidth is smaller than and, simultaneously, the photoelectron e scape depth larger than in a typical experiment.