GE SEGREGATION AT SI-GE (001) STEPPED SURFACES

Authors
KARIMI M KAPLAN T MOSTOLLER M JESSON DE
Citation
M. Karimi et al., GE SEGREGATION AT SI-GE (001) STEPPED SURFACES, Physical review. B, Condensed matter, 47(15), 1993, pp. 9931-9932
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
15
Year of publication
1993
Pages
9931 - 9932
Database
ISI
SICI code
0163-1829(1993)47:15<9931:GSAS(S>2.0.ZU;2-M
Abstract
Atomistic calculations using the Stillinger-Weber and Tersoff interato mic potentials are used to study the energetics of Si-Ge interchange a t Si step edges on (001) Ge surfaces. The calculations indicate that G e segregation at S(B) rebonded step edges is energetically favored. Th is is consistent with the Ge-pump model of Jesson, Pennycook, and Bari beau [Phys. Rev. Lett. 66, 750 (199 1)].