OBSERVATION OF NOVEL TRANSPORT PHENOMENA IN A SI0.8GE0.2 2-DIMENSIONAL HOLE GAS

Authors
EMELEUS CJ WHALL TE SMITH DW MATTEY NL KUBIAK RA PARKER EHC KEARNEY MJ
Citation
Cj. Emeleus et al., OBSERVATION OF NOVEL TRANSPORT PHENOMENA IN A SI0.8GE0.2 2-DIMENSIONAL HOLE GAS, Physical review. B, Condensed matter, 47(15), 1993, pp. 10016-10019
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
15
Year of publication
1993
Pages
10016 - 10019
Database
ISI
SICI code
0163-1829(1993)47:15<10016:OONTPI>2.0.ZU;2-Q
Abstract
We report measurements of the magnetoresistance and Hall coefficient o f a two-dimensional hole gas defined at a remote-doped Si/Si0.8Ge0.2 h eterojunction. In addition to the usual quantum interference and inter action corrections, one can clearly resolve effects relating to the te mperature dependence of the static dielectric function, strain-induced suppression of spin-orbit scattering, and anisotropy of the hole g fa ctor. A number of issues worthy of further theoretical study are sugge sted.