FORMATION OF AN ULTRATHIN AMORPHOUS LAYER AT IN PD INTERFACES OBSERVED BY LOCAL AND NONLOCAL TECHNIQUES/

Authors
FINK R KOCH T KRAUSCH G MARIEN J PLEWNIA A RUNGE BU SCHATZ G SIBER A ZIEMANN P
Citation
R. Fink et al., FORMATION OF AN ULTRATHIN AMORPHOUS LAYER AT IN PD INTERFACES OBSERVED BY LOCAL AND NONLOCAL TECHNIQUES/, Physical review. B, Condensed matter, 47(15), 1993, pp. 10048-10051
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
15
Year of publication
1993
Pages
10048 - 10051
Database
ISI
SICI code
0163-1829(1993)47:15<10048:FOAUAL>2.0.ZU;2-3
Abstract
The perturbed gammagamma-angular correlation technique has been used t o study In/Pd(100) interfaces using In-111 isotopes as local probes. A thin amorphous interface layer is found after In deposition at 77 K. Above 350 K, crystalline In/Pd compounds are formed starting with In3P d. This sequence and especially the formation of an amorphous interfac e has been corroborated by studying the resistance of ultrathin In/Pd multilayers during film growth at 90 K. The previously unknown amorpho us In3Pd phase was identified by in situ electron diffraction on vapor -quenched films.