Photoelectric properties were measured on a Ga2Se3 single crystal prep
ared by a special design based on the Bridgman technique. We report th
e results of an investigation of the dependence of DC and AC photocond
uctivity on light intensity, applied voltage and ambient temperature.
The forbidden energy gap at room temperature and the thermal coefficie
nt of the energy gap were calculated also and found to be 1.793 eV and
-1.31 x 10(-3) eV K-1 respectively.