PHOTOELECTRIC PROPERTIES OF GA2SE3 SINGLE-CRYSTALS

Citation
M. Abdalrahman et Ha. Elshaikh, PHOTOELECTRIC PROPERTIES OF GA2SE3 SINGLE-CRYSTALS, Journal of physics. D, Applied physics, 29(3), 1996, pp. 889-892
Citations number
15
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
29
Issue
3
Year of publication
1996
Pages
889 - 892
Database
ISI
SICI code
0022-3727(1996)29:3<889:PPOGS>2.0.ZU;2-#
Abstract
Photoelectric properties were measured on a Ga2Se3 single crystal prep ared by a special design based on the Bridgman technique. We report th e results of an investigation of the dependence of DC and AC photocond uctivity on light intensity, applied voltage and ambient temperature. The forbidden energy gap at room temperature and the thermal coefficie nt of the energy gap were calculated also and found to be 1.793 eV and -1.31 x 10(-3) eV K-1 respectively.