The next generation of microelectronic devices will require design of
new kinds of polymers which are tailored to display a dielectric const
ant as low as 2.0, a coefficient of thermal expansion (CTE) which matc
hes the metal circuitry as well as the silicon substrate, moisture and
chemical resistance, and dimensional stability at processing temperat
ures of 300-400 degrees C which are required to form an adhesive bond
between laminates. In our program, we have made significant progress i
n all of these areas through the use of liquid crystalline copolyester
s (LCP's) laminated with a newly developed crosslinkable copolyester.
In this paper, data are presented which illustrate how films and coati
ngs of either system can be made to adhere in the solid state by inter
chain transesterification reactions (ITR) at the interface. Ability to
foam the crosslinkable copolyester films provides direct control over
the dielectric constant. The effect of pore size and distribution on
the dielectric constant will be discussed. The potential to dramatical
ly increase the melting point of the LCP's through high temperature an
nealing is also discussed.