EXTENDED GENERATION PROFILE - EBIC MODEL

We have developed a model for the calculation of the induced current d ue to an electron beam with an extended generation profile. As well as the number of absorbed and diffuse electrons as a function of the dep th, the generation profile takes into account the lateral diffusion an d the effect of defects, dislocations and recombination surfaces. The expression from the Electron Beam Induced Current (EBIC) is obtained b y solving the continuity equation in permanent regime by the Green fun ction method. In the case of a Schottky diode Au/InP, obtained by ioni c scattering followed by a quick thermal treatment, the induced curren t profile is compared to the theoretical profiles whose analytical exp ressions are given by Van Roosbroeck and Bresse. The experimental curr ent profile, measured by S.E.M provided us with the calculation of the diffusion length of the minority carriers, L(n) = 1 mu m. The theoret ical curve obtained from the proposed model is in good agreement with the experimental one for a surface recombination velocity of 10(4) cm s(-1). Our results are found to be consistent with those obtained by o ther experimental techniques on the same samples.