IMPROVED DOSE METROLOGY IN OPTICAL LITHOGRAPHY

Citation
Cl. Cromer et al., IMPROVED DOSE METROLOGY IN OPTICAL LITHOGRAPHY, Solid state technology, 39(4), 1996, pp. 75
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
39
Issue
4
Year of publication
1996
Database
ISI
SICI code
0038-111X(1996)39:4<75:IDMIOL>2.0.ZU;2-G
Abstract
Maintaining critical dimensions (CDs) in optical lithography requires careful control over the UV/DUV dose applied to a photoresist, especia lly as CDs become smaller. To meet the growing need for a UV-measureme nt infrastructure in the semiconductor industry, the National Institut e of Standards and Technology (NIST) is improving its primary radiomet ric standards by an order of magnitude, reducing the absolute uncertai nty in irradiance measurements to about 0.5% in the 100-400-nm range. Parallel improvements in transfer standards and source calibrations wi ll allow the dissemination of highly accurate radiometric scales direc tly to industry.