DIRECT WRITING OF GAAS OPTICAL WAVE-GUIDES BY LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION

Authors
BOUTROS KS ROBERTS JC BEDAIR SM
Citation
Ks. Boutros et al., DIRECT WRITING OF GAAS OPTICAL WAVE-GUIDES BY LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(15), 1996, pp. 2041-2042
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
15
Year of publication
1996
Pages
2041 - 2042
Database
ISI
SICI code
0003-6951(1996)68:15<2041:DWOGOW>2.0.ZU;2-1
Abstract
We demonstrate the direct writing of GaAs waveguide structures by sele ctive area deposition using laser-assisted chemical vapor deposition ( LCVD). The multimode waveguides have a Gaussian shape and a very smoot h surface, and they exhibit losses as low as 5.4 dB/cm. The LCVD techn ique offers the capability of selective growth of independent device s tructures, and hence the capability of monolithic integration of these devices for optoelectronic applications. (C) 1996 American Institute of Physics.