PASSIVATION OF P-B0 AND P-B1 INTERFACE DEFECTS IN THERMAL (100)SI SIO2 WITH MOLECULAR-HYDROGEN/

It is found that the passivation of both the P-b0 and P-b1 defects in (100)Si/SiO2 (grown at <750 degrees C) with molecular H-2 may well be described by the same defect- H-2 reaction-limited kinetic model apply ing to interfacial P-b defects in (111) Si/SiO2 grown at 850 degrees C . Yet, whereas P-b was typified by a single-valued activation energy E (a)=1.66 eV, both P-b0 and P-b1 are found to exhibit a Gaussian spread sigma(Ea)=0.15+/-0 03 eV around their respective mean E(a) values, de termined as 1.51 and 1.57+/-0.04 eV. Such a spread complies with previ ous electron spin resonance data on stress-induced structural variatio ns within the P-b bath. All three interface defects thus passivate com parably. (C) 1996 American Institute of Physics.