Wtc. Fang et al., SURFACE AND BULK POINT-DEFECT GENERATION IN CZOCHRALSKI AND FLOAT-ZONE TYPE SILICON-WAFERS, Applied physics letters, 68(15), 1996, pp. 2085-2087
The origin of the defects which mediate dopant diffusion in silicon ha
s never been conclusively established. Two primary theories, one favor
ing bulk generation and the other surface generation, have been propos
ed to explain the source of point defects. However, the inability to e
xperimentally isolate surface effects from bulk effects has presented
experimental determination of the dominant point defect source. An exp
erimental structure employing multiple box-shaped boron marker layers
on a variety of silicon substrates has generated strong evidence for s
eparate bulk and surface generation of point defects. A method of usin
g dislocations generated by unstably strained SiGe layers as a sink of
interstitials allows a determination of the relative magnitude of sur
face interstitial generation and bulk interstitial generation. Analysi
s reveals that the wafer surface under inert anneals is a significant
source of point defects and that the interstitial source in the bulk i
s dependent on the oxygen concentration and precipitate size. (C) 1996
American Institute of Physics.