EXCITONIC OPTICAL-PROPERTIES IN SEMICONDUCTOR THIN QUANTUM BOXES OF INTERMEDIATE REGIME BETWEEN ZERO AND 2 DIMENSIONS

Citation
H. Gotoh et al., EXCITONIC OPTICAL-PROPERTIES IN SEMICONDUCTOR THIN QUANTUM BOXES OF INTERMEDIATE REGIME BETWEEN ZERO AND 2 DIMENSIONS, Applied physics letters, 68(15), 1996, pp. 2132-2134
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
15
Year of publication
1996
Pages
2132 - 2134
Database
ISI
SICI code
0003-6951(1996)68:15<2132:EOISTQ>2.0.ZU;2-8
Abstract
We discuss the optical properties in thin quantum boxes based on a the oretical analysis that rigorously treats excitonic confinement effects in the intermediate regime between zero and two dimensions. Our theor y can exactly analyze not only the excitonic ground state but also hig her energy states, and thus can simulate whole absorption spectra near the band edge region. We also report novel exciton electro-absorption effects found in the intermediate confinement regime. (C) 1996 Americ an Institute of Physics.