H. Gotoh et al., EXCITONIC OPTICAL-PROPERTIES IN SEMICONDUCTOR THIN QUANTUM BOXES OF INTERMEDIATE REGIME BETWEEN ZERO AND 2 DIMENSIONS, Applied physics letters, 68(15), 1996, pp. 2132-2134
We discuss the optical properties in thin quantum boxes based on a the
oretical analysis that rigorously treats excitonic confinement effects
in the intermediate regime between zero and two dimensions. Our theor
y can exactly analyze not only the excitonic ground state but also hig
her energy states, and thus can simulate whole absorption spectra near
the band edge region. We also report novel exciton electro-absorption
effects found in the intermediate confinement regime. (C) 1996 Americ
an Institute of Physics.