LARGE-AREA DIAMOND DEPOSITION IN AN ATMOSPHERIC-PRESSURE STAGNATION-FLOW REACTOR

Citation
Dw. Hahn et al., LARGE-AREA DIAMOND DEPOSITION IN AN ATMOSPHERIC-PRESSURE STAGNATION-FLOW REACTOR, Applied physics letters, 68(15), 1996, pp. 2158-2160
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
15
Year of publication
1996
Pages
2158 - 2160
Database
ISI
SICI code
0003-6951(1996)68:15<2158:LDDIAA>2.0.ZU;2-D
Abstract
We present the results of large-area (20 cm(2)) diamond deposition fro m a scaled-up stagnation-flow reactor. The reactor uses a unique nozzl e geometry that optimizes reagent gas usage. The premixed acetylene-ox ygen-hydrogen flames were operated in a highly strained configuration, allowing uniform deposition of diamond with growth rates exceeding 25 mu m/h. Substrate temperature control and flame stability of the chem ical vapor deposition reactor are described. Diamond films were deposi ted on a molybdenum substrate with a surface temperature of approximat ely 1200 K and C/O ratio of 1.03. Diamond film growth results are pres ented, and film uniformity is assessed using micro-Raman spectroscopy. (C) 1996 American Institute of Physics.