FORMATION OF THE SPECTRUM OF DEEP LEVELS IN PLASTICALLY DEFORMED DURING THE EXPANSION OF DISLOCATION LOOPS

The electrical activity of dislocations in silicon crystals of differe nt purities was studied by the method of transient capacitance spectro scopy as a function of the dislocation path length, the temperature, a nd the duration of the subsequent annealing. It was shown that disloca tions introduced by short-lived deformation do not introduce deep leve ls in the band gap of silicon. The electrical activity of the dislocat ions increases with the duration of the deformation and subsequent ann ealing. The time required for achieving saturation depends on the puri ty of the crystal. The results are discussed in terms of the formation of specific impurity complexes in an atmosphere of point defects surr ounding a dislocation. (C) 1996 American Institute of Physics.